symbol parameters rating units absolute maximum ratings: v cc collector-supply voltage 55 v p diss power dissipation 1250 w i c collector current 25 a t j junction temperature 200 o c t stg storage temperature -65 to 200 o c symbol parameters & conditions unit min. typ. max. v cb = 50 v, i c = 9.00 a, class c silicon microwave power transistor bipolarics inc. part number BMT10B450-50 features: ? p out = 450 w @ 1.0 ghz ? high gain g pe = 7.0 db @ 1.0 ghz ? high gain bandwidth product f t = 6.5 ghz @ i c = 9.00 a ? high reliability gold metallization nitride passivation ? input/output impedance matching ? ballasted emitter ? hermetic stripline beo package ? common base p 1db power output at 1 db compression: f = 1.0 ghz w 450 collector efficiency class c % 50 h fe forward current transfer ratio: v cb = 50 v, i c = 9.00 a 20 60 100 c ob output capacitance: f = 1 mhz, i e = 0 pf 14.0 p t total power dissipation w 900 performance data: jc thermal resistance 4.5 c/w thermal data: bpt10b450-50 is a 450 watt npn microwave transistor designed for pulse power amplifier applica- tions in the 1.0 ghz range. avionics application include iff, tacan, and dme. advanced process- ing techniques such as ion implanted junctions, ballast resistors, gold metallized oxide isolation and nitrade passivations assure high performance and reliability. hermetic beo package with gold-tin seal is compat- ible with the most demanding high reliability industrial and military standards. package 50: 0.500" x 0.400" 2 lead flange description:
silicon microwave power transistor bipolarics inc. part number BMT10B450-50 page 2
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